Advantages of GaN charger

In short, GaN claims to be the core materials of the third generation of semiconductors.  
GaN has a wider band gap than silicon, which means it can withstand higher voltages and conduct electricity better than silicon.  
In short, GaN is much more efficient than silicon for the same volume of two materials.  
If GaN were to replace all of today’s electronics, it might reduce the power consumption of electronics by another 10 or 25 percent 

GaN is a stronger presence in many power management products.  At the application level, GaN charger can achieve faster charging with smaller volume.

New technologies such as gallium nitride (GaN) are expected to improve many aspects of power management, generation and power output greatly in future.
For users, the immediate benefit is faster charging, but not increase the volume.
In view of the nature of GaN materials, if the chargers are made of GaN materials, it can not only reach small volume, light weight, but also improve calorific volume and efficiency transmission greatly,   The efficiency of many products will be significantly reduced once they are heated, Such as CPU and chargers.

Disadvantages of GaN chargers:
GaN material also has disadvantages at present, Such as high cost and limited production capacity.
If there is no way to increase production capacity and reduce costs through industrialization, it is not easy to replace silicon in short term.  
However, any material needs time to precipitate, and GaN materials are expected to replace the current materials in future.