The chemical name of Gallium nitride is GaN, The GaN charger is a new technology on charging devices.
The GaN chargers made of gallium nitride materials with more higher power and smaller sizes, The sizes are smaller for the same amount of power, and more power for the same sizes.
In short, Gallium nitride is the core materials of the third generation semiconductor.

GaN chargers description:
The new technologies on GaN Chargers are expected to improve greatly on many aspects as power management, power generation and power output,etc.
It has the characteristics of large band gap width, high thermal conductivity, high temperature resistance, radiation resistance, acid and alkali resistance, high strength and high hardness.
Gallium nitride is new semiconductor materials which can replace silicon and germanium, The frequency of switch tube made of GaN materials is greatly improved, but the loss is less, This allows chargers to use smaller transformers and other inductance components, thus increasing efficiency.
GaN has better breakdown ability, higher electron density and electron mobility, also higher working temperature than silicon based semiconductor .